790 research outputs found

    Close-circuit domain quadruplets in BaTiO3_3 nanorods embedded in SrTiO3_3 film

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    Cylindrical BaTiO3 nanorods embedded in (100)-oriented SrTiO3 epitaxial film in a brush-like configuration are investigated in the framework of the Ginzburg-Landau-Devonshire model. It is shown that strain compatibility at BaTiO3/SrTiO3 interfaces keeps BaTiO3 nanorods in the rhombohedral phase even at room temperature. Depolarization field at the BaTiO3/SrTiO3 interfaces is reduced by an emission of the 109-degree or 71-degree domain boundaries. In case of nanorods of about 10-80 nm diameter, the ferroelectric domains are found to form a quadruplet with a robust flux-closure arrangement of the in-plane components of the spontaneous polarization. The out-of-plane components of the polarization are either balanced or oriented up or down along the nanorod axis. Switching of the out-of-plane polarization with coercive field of about 5.1065.10^6 V/m occurs as a collapse of a 71-degree cylindrical domain boundary formed at the curved circumference surface of the nanorod. The remnant domain quadruplet configuration is chiral, with the C4C_4 macroscopic symmetry. More complex stable domain configurations with coexisting clockwise and anticlockwise quadruplets contain interesting arrangement of strongly curved 71-degree boundaries.Comment: Erratta - corrected error in Fig.

    N-body U and K matrix program

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    Computer program was devised to compute free-fall trajectories of satellites, allowing for injection errors and midcourse velocity perturbations. Program consists of trajectory perturbing program and N-body integrating conic program which can also be used as 2-body patch conic program

    Shadow constraint program

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    Shadow constraint program computations of trajectories intersection with shadow cone for use in Centaur projec

    Uniaxial-stress induced phase transitions in [001]c-poled 0.955Pb(Zn1/3Nb2/3)O3-0.045PbTiO3

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    First-order, rhombohedral to orthorhombic, stress-induced phase transitions have been evidenced by bulk charge-stress measurements and X-ray diffraction derived lattice strain measurements in [001]c-poled PZN-4.5PT. The transitions are induced by uniaxial, compressive loads applied either along or perpendicular to the poling direction. In each case, they occur via rotation of the polar vector in the Cm monoclinic plane and the induced lattice strain is hysteretic yet reversible. Although no depoling is observed in the transverse mode, net depolarization is observed under longitudinal stress which is important for the use of [001]c-poled PZN-PT and PMN-PT single crystals in Tonpilz-type underwater projectors.Comment: To be published in Applied Physics Letters, 16 pages, 3 figure

    Central mode and soft mode behavior in PbMg1/Nb2/3O3 relaxor ferroelectric

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    The relaxor ferroelectric PbMg1/Nb2/3O3 was investigated by means of broad-band dielectric and Fourier Transform Infrared (FTIR) transmission spectroscopy in the frequency range from 1 MHz to 15 THz at temperatures between 20 and 900 K using PMN films on infrared transparent sapphire substrates. While thin film relaxors display reduced dielectric permittivity at low frequencies, their high frequency intrinsic or lattice response is shown to be the same as single crystal/ceramic specemins. It was observed that in contrast to the results of inelastic neutron scattering, the optic soft mode was underdamped at all temperatures. On heating, the TO1 soft phonon followed the Cochran law with an extrapolated critical temperature equal to the Burns temperature of 670 K and softened down to 50 cm-1. Above 450 K the soft mode frequency leveled off and slightly increased above the Burns temperature. A central mode, describing the dynamics of polar nanoclusters appeared below the Burns temperature at frequencies near the optic soft mode and dramatically slowed down below 1 MHz on cooling below room temperature. It broadened on cooling, giving rise to frequency independent losses in microwave and lower frequency range below the freezing temperature of 200 K. In addition, a new heavily damped mode appeared in the FTIR spectra below the soft mode frequency at room temperature and below. The origin of this mode as well as the discrepancy between the soft mode damping in neutron and infrared spectra is discussed.Comment: 7 pages with 7 figures, submitted to Phys. Rev.

    Effect of mechanical loading on the tuning of acoustic resonances in Ba x Sr1− x TiO3 thin films

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    The effect of mechanical loading on the tuning performance of a tunable Thin Film Bulk Acoustic Wave Resonator (TFBAR) based on a Ba0.3Sr0.7TiO3 (BST) thin film has been investigated experimentally and theoretically. A membrane-type TFBAR was fabricated by means of micromachining. The mechanical load on the device was increased stepwise by evaporating SiO2 on the backside of the membrane. The device was electrically characterized after each evaporation step and the results were compared to those obtained from modeling. The device with the smallest mechanical load exhibited a tuning of − 2.4% and − 0.6% for the resonance and antiresonance frequencies at a dc electric field of 615kV/cm, respectively. With increasing mechanical load a decrease in the tuning performance was observed. This decrease was rather weak if the thickness of the mechanical load was smaller or comparable to the thickness of the active BST film. If the thickness of the mechanical load was larger than the thickness of the active BST layer, a significant reduction in the tuning performance was observed. The weaker tuning of the antiresonance frequency was due to a reduced tuning of the sound velocity of the BST layer with increasing dc bias. The resonance frequency showed a reduced tuning due to a decrease in the effective electromechanical coupling factor of the device with increasing mechanical load. With the help of the modeling we could de-embed the intrinsic tuning performance of a single, non-loaded BST thin film. We show that the tuning performance of the device with the smallest mechanical load we fabricated is close to the intrinsic tuning characteristics of the BST laye

    Piezoelectric anisotropy: Enhanced piezoelectric response along nonpolar directions in perovskite crystals

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    This paper discusses the mechanisms that can contribute to the enhanced longitudinal piezoelectric effect along nonpolar directions in perovskite crystals, such as BaTiO3, PbTiO3, KNbO3, Pb(Mg1/3Nb2/3)O3-PbTiO3 and Pb(Zn1/2Nb2/3)O3-PbTiO3. Piezoelectric anisotropy is discussed in relation to temperature induced phase transitions, compositional variation in solid solutions with morphotropic phase boundaries, applied electric fields, the domain wall structure and domain wall displacemen

    Fabrication and structural analysis of ZnO coated fiber optic phase modulators

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    Fiber optic modulators were fabricated by coating optical fibers with electrode and piezoelectric ZnO layers. The techniques of piezoelectric fiber optic modulator (PFOM) fabrication are presented, and the microstructure and crystallographic texture of the coatings are analyzed. In order to produce thick (approximately 5 μm) ZnO coatings, it was necessary to study the reactive dc magnetron sputtering process in O2/Ar gas mixtures under conditions close to the transition between an oxidized and nonoxidized Zn target surface. In situ quartz crystal microbalance measurements of the deposition rate revealed thee distinct regions in the deposition rate (R) vs oxygen partial pressure behavior, at constant total pressure, for sputtering under conditions that provided an oxidized Zn target surface. Additionally, a transition between oxygen and argon dominated sputtering as observed by varying the sputtering pressure while maintaining a constant The transition between oxygen and argon dominated sputtering influences R to varying extents within the three R vs regions for an oxidized target surface. Correlations among the cathode current and voltage, deposition rate, and gas flow rate are presented to give a better understanding of the reactive sputtering processes occurring at the oxidized Zn target surface. Sputtering conditions optimized for a high ZnO deposition rate were used to produce 〈001〉 radially oriented ZnO fiber coatings for PFOM devices that can produce optical phase shifts as large as 0.38 rad/

    Influence of substrate bias on the structural and dielectrical properties of magnetron-sputtered BaxSr1-xTiO3 thin films

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    The application of a substrate bias during rf magnetron sputtering alters the crystalline structure, grain morphology, lattice strain and composition of BaxSr1-xTiO3 thin films. As a result, the dielectric properties of Pt/BaxSr1-xTiO3/Pt parallel-plate capacitors change significantly. With increasing substrate bias we observe a clear shift of the ferroelectric to paraelectric phase transition towards higher temperature, an increase of the dielectric permittivity and tunability at room temperature, and a deterioration of the dielectric loss. To a large extent these changes correlate to a gradual increase of the tensile in-plane film strain with substrate bias and an abrupt change in film composition.Comment: 24 pages, 8 figures, submitted to Ferroelectric

    Landau thermodynamic potential for BaTiO_3

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    In the paper, the description of the dielectric and ferroelectric properties of BaTiO_3 single crystals using Landau thermodynamic potential is addressed. Our results suggest that when using the sixth-power free energy expansion of the thermodynamic potential, remarkably different values of the fourth-power coefficient, \beta (the coefficient of P^4_i terms), are required to adequately reproduce the nonlinear dielectric behavior of the paraelectric phase and the electric field induced ferroelectric phase, respectively. In contrast, the eighth-power expansion with a common set of coefficients enables a good description for both phases at the same time. These features, together with the data available in literature, strongly attest to the necessity of the eighth-power terms in Landau thermodynamic potential of BaTiO_3. In addition, the fourth-power coefficients, \beta and \xi (the coefficient of P^2_i P^2_j terms), were evaluated from the nonlinear dielectric responses along [001], [011], and [111] orientations in the paraelectric phase. Appreciable temperature dependence was evidenced for both coefficients above T_C. Further analysis on the linear dielectric response of the single domain crystal in the tetragonal phase demonstrated that temperature dependent anharmonic coefficients are also necessary for an adequate description of the dielectric behavior in the ferroelectric phase. As a consequence, an eighth-power thermodynamic potential, with some of the anharmonic coefficients being temperature dependent, was proposed and compared with the existing potentials. In general, the potential proposed in this work exhibits a higher quality in reproducing the dielectric and ferroelectric properties of this prototypic ferroelectric substance.Comment: 7 figures, 5 table
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